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Voltage: 1,700, 2,500, 4,500 V
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching ...
Current: 600 A
Voltage: 1,200 V
Littelfuse IGBT modules offer high efficiency and fast switching speeds of modern IGBT technology in a robust and flexible format. Used for power control applications, Littelfuse offers an expanded portfolio ...
Toshiba offers a wide range of bipolar transistors suitable for various applications, including radio frequency (RF) and power supply devices.
Current: 28 A
Voltage: 650 V
Hard-switching TRENCHSTOP™ 5 S5 IGBT in a small footprint TO-220 package addresses applications switching between 10 kHz and 40 kHz to deliver high current density, high efficiency, faster time-to-market cycles, circuit ...
Infineon Technologies AG
QC962-8A is an integrated hybrid IGBT driver. Its main function is to receive the square wave signal from the controller, and convert it into an isolated, amplified gâte signal which Controls the IGBT’s turn-on and turn off cycle.
QP12W05S-37 is a hybrid integrated IGBT driver designed for driving IGBT modules. This device is a fully isolated gate drive circuit consisting of an optimally isolated gate drive amplifier and an isolated ...
Current: 25 mA
Voltage: 13 V
FEATURES - Built-in isolated DC-DC power supply; Single power supply drive topology - High isolation voltage of 3750VAC - Input signal frequency up to 20kHz - Built-in fault circuit with a pin for fault feedback - Drive signal ignored ...
High Current Dvice Socket High Temperature ℃ 5.45mm Pitch Right Angle Low Outgassing This is a socket that can correspond to PC Board arrangement with height restrictions by turning the device sideways. ● Supports various packages ...
JC CHERRY INC.
Sockets for Power IC Standard type Single in Line ●How to order ex: PDSA-1076-Sxx-GG x:Number of positions 2 to 16 Dielectric Strength - Insulation Resistance - - Operating Temperature EX.) PDSA-1076-Sxx-GG x ...
JC CHERRY INC.
Medium Size Socket for Power IC Through hole type Dual Style 2.54mm / 0.100" Pitch ●How to order ex: PDSP-CM1-Dxx-GG x: Number of positions 04,12,20 (Even Number) *Regarding to other number of position, please feel ...
JC CHERRY INC.
Current: 0.8 A
Voltage: 50 V
DC Current Gain hFE Max.:400 DC Current Gain hFE Min.:160 Description:TO-92, 50V, 0.8A, NPN Bipolar Transistor IC (A):0.8 PD (W):0.625 Package:TO-92 Polarity:NPN Status:Active TJ Max. (°C):150 VCBO ...
Current: 15 A
Voltage: 140 V
NPN Bipolar Power Transistor The MJ15001 and MJ15002 are power transistors designed for high power audio, disk head positioners and other linear applications. Features High Safe ...
Fairchild Semiconductor
Current: 20 A
Voltage: 650 V
Switching loss reduced, enabling high-speed switching . (2-pin package) AEC-Q101 qualified Shorter recovery time High-speed switching possible Reduced temperature dependence
ROHM Semiconductor
Current: 24 A
Voltage: 1,700 V
The device uses a Diffused Collector in Planar technology adopting ”Enhanced High Voltage Structure” (EHVS1) developed to fit High-Definition CRT displays. The new HD product series show improved silicon efficiency bringing updated ...
STMicroelectronics
Current: 150 A - 3,600 A
Voltage: 1,200, 1,700, 3,300, 4,500, 6,500 V
Hitachi Energy's IGBT power modules are available from 1700 to 6500 volt as single, dual / phase-leg, chopper IGBT and dual diode modules. The high-power HiPak IGBT modules feature low ...
Current: 3,000, 1,300, 2,000 A
Voltage: 4,500, 5,200 V
StakPak is a family of high power insulated gate bipolar transistor (IGBT) press-packs and diodes in an advanced modular housing that guarantees uniform chip pressure in multiple-device stacks. Although ...
Voltage: 60 V
The CENTRAL SEMICONDUCTOR BCV47 is a silicon NPN Darlington transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain. ...
Central Semiconductor
... designs HousingMiniSKiiP II 1 (42x40x16) (LLxBBxHH)42x40x16 SwitchesSeven Pack VCES in V600 ICnom in A6 TechnologyNPT IGBT (Ultrafast)
SEMIKRON
Voltage: 0.24 V - 3.5 V
NPN, PNP, and Complementary Transistors Broad portfolio of bipolar NPN and PNP transistors.
Current: 10 A - 1,600 A
Voltage: 600 V - 1,700 V
Greegoo offers IGBT (insulated-gate bipolar transistor) modules in different topologies, current and voltage ratings. Starting from 15A to 1600A in voltage classes from 600V to 1700V, ...
Current: 150 A
Voltage: 600 V
... VCES – 600V. Switches – Half Bridge. IGBT Modules are housed in a standard industrial case making it easy to easy integrate of the device into existing equipment. The IGBT modules (Insulated Gate Bipolar ...
Voltage: 20, 50 V
N-Channel MOSFET and NPN Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ...
Diodes Incorporated
Current: 25 mA
Voltage: 20 V
Collector Emitter Voltage - Vceo 20 V DC Collector Current - Ic - 25 mA Polarity - pol - NPN Power Dissipation - Ptot - 0.200 W Junction Temperature - Tjmax - 150 °C DC Current Gain - hfe - 85 - VcE - 10V - Ic - 7 mA Collector Saturation ...
Diotec
Current: 10, 25 A
Voltage: 1,200 V
Features •Trench + Filed Stop IGBT technology •10ps short circuit capability •Versât) with positive temperature coefficient •Low inductance case •Fast & soft reverse recovery anti-parallel FWD •Isolated copper baseplate ...
Rongtech Industry (Shanghai) Inc.,
Features: Features: Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - ...
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