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Voltage: 1,700, 2,500, 4,500 V
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching ...
Current: 600 A
Voltage: 1,200 V
Littelfuse IGBT modules offer high efficiency and fast switching speeds of modern IGBT technology in a robust and flexible format. Used for power control applications, Littelfuse offers an expanded portfolio ...
Toshiba offers a wide range of bipolar transistors suitable for various applications, including radio frequency (RF) and power supply devices.
Current: 28 A
Voltage: 650 V
Hard-switching TRENCHSTOP™ 5 S5 IGBT in a small footprint TO-220 package addresses applications switching between 10 kHz and 40 kHz to deliver high current density, high efficiency, faster time-to-market cycles, circuit ...
Infineon Technologies AG
QC962-8A is a hybrid integrated IGBT driver designed for driving N-channel IGBT modules in any gate amplifier application. The device provides the required electrical isolation between input and output ...
QP12W05S-37 is a hybrid integrated IGBT driver designed for driving IGBT modules. This device is a fully isolated gate drive circuit consisting of an optimally isolated gate drive amplifier and an isolated ...
Current: 25 mA
Voltage: 13 V
FEATURES - Built-in isolated DC-DC power supply; Single power supply drive topology - High isolation voltage of 3750VAC - Input signal frequency up to 20kHz - Built-in fault circuit with a pin for fault feedback - Drive signal ignored ...
High Current Dvice Socket High Temperature ℃ 5.45mm Pitch Right Angle Low Outgassing This is a socket that can correspond to PC Board arrangement with height restrictions by turning the device sideways. ● Supports various packages ...
JC CHERRY INC.
Sockets for Power IC Standard type Single in Line ●How to order ex: PDSA-1076-Sxx-GG x:Number of positions 2 to 16 Dielectric Strength - Insulation Resistance - - Operating Temperature EX.) PDSA-1076-Sxx-GG x ...
JC CHERRY INC.
Medium Size Socket for Power IC Through hole type Dual Style 2.54mm / 0.100" Pitch ●How to order ex: PDSP-CM1-Dxx-GG x: Number of positions 04,12,20 (Even Number) *Regarding to other number of position, please feel ...
JC CHERRY INC.
Current: 15 A
Voltage: 140 V
NPN Bipolar Power Transistor The MJ15001 and MJ15002 are power transistors designed for high power audio, disk head positioners and other linear applications. Features High Safe ...
Fairchild Semiconductor
Current: 20 A
Voltage: 650 V
Switching loss reduced, enabling high-speed switching . (2-pin package) AEC-Q101 qualified Shorter recovery time High-speed switching possible Reduced temperature dependence
ROHM Semiconductor
Current: 24 A
Voltage: 1,700 V
The device uses a Diffused Collector in Planar technology adopting ”Enhanced High Voltage Structure” (EHVS1) developed to fit High-Definition CRT displays. The new HD product series show improved silicon efficiency bringing updated ...
STMicroelectronics
Current: 150 A - 3,600 A
Voltage: 1,200, 1,700, 3,300, 4,500, 6,500 V
Hitachi Energy's IGBT power modules are available from 1700 to 6500 volt as single, dual / phase-leg, chopper IGBT and dual diode modules. The high-power HiPak IGBT modules feature low ...
Current: 3,000, 1,300, 2,000 A
Voltage: 4,500, 5,200 V
StakPak is a family of high power insulated gate bipolar transistor (IGBT) press-packs and diodes in an advanced modular housing that guarantees uniform chip pressure in multiple-device stacks. Although ...
Voltage: 60 V
The CENTRAL SEMICONDUCTOR BCV47 is a silicon NPN Darlington transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain. ...
Central Semiconductor
... designs HousingMiniSKiiP II 1 (42x40x16) (LLxBBxHH)42x40x16 SwitchesSeven Pack VCES in V600 ICnom in A6 TechnologyNPT IGBT (Ultrafast)
SEMIKRON
Voltage: 0.24 V - 3.5 V
NPN, PNP, and Complementary Transistors Broad portfolio of bipolar NPN and PNP transistors.
Current: 0.8 A
Voltage: 50 V
DC Current Gain hFE Max.:400 DC Current Gain hFE Min.:160 Description:TO-92, 50V, 0.8A, NPN Bipolar Transistor IC (A):0.8 PD (W):0.625 Package:TO-92 Polarity:NPN Status:Active TJ Max. (°C):150 VCBO ...
Current: 10 A - 1,600 A
Voltage: 600 V - 1,700 V
Greegoo offers IGBT (insulated-gate bipolar transistor) modules in different topologies, current and voltage ratings. Starting from 15A to 1600A in voltage classes from 600V to 1700V, ...
Current: 150 A
Voltage: 600 V
... VCES – 600V. Switches – Half Bridge. IGBT Modules are housed in a standard industrial case making it easy to easy integrate of the device into existing equipment. The IGBT modules (Insulated Gate Bipolar ...
Voltage: 20, 50 V
N-Channel MOSFET and NPN Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ...
Diodes Incorporated
Current: 25 mA
Voltage: 20 V
Collector Emitter Voltage - Vceo 20 V DC Collector Current - Ic - 25 mA Polarity - pol - NPN Power Dissipation - Ptot - 0.200 W Junction Temperature - Tjmax - 150 °C DC Current Gain - hfe - 85 - VcE - 10V - Ic - 7 mA Collector Saturation ...
Diotec
Current: 10, 25 A
Voltage: 1,200 V
Features •Trench + Filed Stop IGBT technology •10ps short circuit capability •Versât) with positive temperature coefficient •Low inductance case •Fast & soft reverse recovery anti-parallel FWD •Isolated copper baseplate ...
Rongtech Industry (Shanghai) Inc.,
Features: Features: Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - ...
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