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Maximum temperature: 1,600, 1,700, 1,800 °C
Width: 455, 580 mm
Height: 365, 515, 765 mm
... into their own equipment. Optional ‘L’ stands are available allowing the furnaces to be self supporting. Application Examples annealing, carbonisation, crystal growth, debinding, ...
Maximum temperature: 1,700, 1,600 °C
Width: 700, 600, 800 mm
Height: 700, 800, 1,050, 1,250 mm
... The two furnace chamber halves consist of high grade insulation plates with vertically hanging MoSi2 heating elements. A safety switch protects the operator by switching off the heating elements once the furnace ...
Maximum temperature: 1,600, 1,700, 1,800 °C
Width: 950 mm
Height: 1,800 mm
... gradient and forms a single crystal. The BV-HTRV is a tube furnace which is mounted on a device engineered specifically for the Bridgman method. As a standard, the HTRV 70-250 or the HTRV 100-250 are ...
Maximum temperature: 850 °C - 2,500 °C
Capacity: 5 l - 4,000 l
... bottom furnaces are used in applications such as manufacturing of metal products, heat-treatment, sintering, melting, aging, thermal testing, powder synthesing and chemical decomposition, where a protective environment ...
Maximum temperature: 0 °C - 2,800 °C
Our front loading Multi-Application Laboratory Furnace is our most versatile furnace due to the large number of options and configurations. It is an ideal tool for small sample research and development ...
Materials Research Furnaces
Maximum temperature: 0 °C - 3,500 °C
... run furnace with evacuation, inert gas, and cooling water components integrated into the furnace assembly as well as a 100% duty cycle power source. The Tri-Arc-200 has an optional crystal ...
Materials Research Furnaces
Maximum temperature: 0 °C - 3,500 °C
Arc Melt Furnace ABJ-900 is our largest system for sustained use above 3500°C with safety water flow interlock, insulated bellows, evacuation/gas system, and a heavy duty power source. The chamber hinges rearward giving ...
Materials Research Furnaces
Automatic Crystal Growing Furnace TDR135A-ZJS
JSG
Maximum temperature: 2,300 °C
crystal growing For Physical Vapour Transport (PVT) growth of bulk SiC single crystals after the modified Lely method Other application could be: Synthesis of high-purity SiC raw ...
... stable process and crystal quality as well as continuously high reliability production performance. The modular concept of the system allows a flexible configuration meeting most customers different requirements. SolarCrystallizer Crystal ...
PVA TePla Group
Maximum temperature: 0 °C - 1,050 °C
... Temperature Regulation Accuracy: ± 0.5 °C Min. Need of Space: 1.2 x 1.2 m² High Homogeneity of Layer-Thickness by Horizontal Layer-Growth Fully automatic Computer- Controlled Processing Data-Logging of all Process-Parameters Suitable ...
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