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DC voltage: 350 V
Reverse voltage: 350 V
RFN5BGE3S is the silicon epitaxial planar type Fast Recovery Diode. Low switching loss High current overload capacity
ROHM Semiconductor
DC voltage: 600 V
Reverse voltage: 600 V
RFN20TJ6SFHG is low VF, low switching loss, suitable for general rectification Low forward voltage Low switching loss High current overload capacity
ROHM Semiconductor
DC voltage: 400 V
Reverse voltage: 400 V
RF201LAM4STF is the high reliability Automotive Fast Recovery Diode, suitable for general rectification. Low forward voltage Low switching loss High current overload capacity
ROHM Semiconductor
RF202LAM2S is low VF and low switching loss Fast Recovery Diode which is suitable for general rectification. Low forward voltage Low switching loss High current overload capacity
ROHM Semiconductor
DC voltage: 400 V
Reverse voltage: 400 V
RF101LAM4STF is the high reliability Automotive Fast Recovery Diode, suitable for general rectification. Low forward voltage Low switching loss High current overload capacity
ROHM Semiconductor
Fast recovery diode module Features - Super fast recovery - Max junction temperature up to 175oC - Low forward voltage drop Typical ...
Reverse voltage: 10 kV - 300 kV
Product Features 1. low leakage, low power, high surge capacity. 2. Efficient fast response time. 3. Tj Operating Junction Temperature Range -40~+175 . 4. Reverse avalanche breakdown protection. 5. Polyimide ...
Anshan Leadsun Electronics Co.Ltd
Reverse voltage: 10 kV - 300 kV
Product Features 1. low leakage, low power, high surge capacity. 2. Efficient fast response time. 3. Tj Operating Junction Temperature Range -40~+175 . 4. Reverse avalanche breakdown protection. 5. Polyimide ...
Anshan Leadsun Electronics Co.Ltd
Reverse voltage: 10 kV - 300 kV
Product Features 1. low leakage, low power, high surge capacity. 2. Efficient fast response time. 3. Tj Operating Junction Temperature Range -40~+175 . 4. Reverse avalanche breakdown protection. 5. Polyimide ...
Anshan Leadsun Electronics Co.Ltd
Reverse voltage: 10 kV - 300 kV
Product Features 1. low leakage, low power, high surge capacity. 2. Efficient fast response time. 3. Tj Operating Junction Temperature Range -40~+175 . 4. Reverse avalanche breakdown protection. 5. Polyimide ...
Anshan Leadsun Electronics Co.Ltd
Reverse voltage: 10 kV - 300 kV
Product Features 1. low leakage, low power, high surge capacity. 2. Efficient fast response time. 3. Tj Operating Junction Temperature Range -40~+175 . 4. Reverse avalanche breakdown protection. 5. Polyimide ...
Anshan Leadsun Electronics Co.Ltd
Reverse voltage: 10 kV - 300 kV
Product Features 1. low leakage, low power, high surge capacity. 2. Efficient fast response time. 3. Tj Operating Junction Temperature Range -40~+175 . 4. Reverse avalanche breakdown protection. 5. Polyimide ...
Anshan Leadsun Electronics Co.Ltd
Reverse voltage: 10 kV - 300 kV
Product Features 1. low leakage, low power, high surge capacity. 2. Efficient fast response time. 3. Tj Operating Junction Temperature Range -40~+175 . 4. Reverse avalanche breakdown protection. 5. Polyimide ...
Anshan Leadsun Electronics Co.Ltd
Reverse voltage: 10 kV - 300 kV
Product Features 1. low leakage, low power, high surge capacity. 2. Efficient fast response time. 3. Tj Operating Junction Temperature Range -40~+175 . 4. Reverse avalanche breakdown protection. 5. Polyimide ...
Anshan Leadsun Electronics Co.Ltd
Reverse voltage: 5 kV - 200 kV
Product Features 1. low leakage, low power, high surge capacity. 2. Efficient fast response time. 3. Tj Operating Junction Temperature Range -40~+175 . 4. Reverse avalanche breakdown protection. 5. Polyimide ...
Anshan Leadsun Electronics Co.Ltd
Reverse voltage: 5 kV - 200 kV
Product Features 1. low leakage, low power, high surge capacity. 2. Efficient fast response time. 3. Tj Operating Junction Temperature Range -40~+175 . 4. Reverse avalanche breakdown protection. 5. Polyimide ...
Anshan Leadsun Electronics Co.Ltd
DC voltage: 1.1 V
Reverse voltage: 400 V
DESCRIPTION SFM200CC4A2D module, with low forward voltage and low recovery loss, offers the optimum performance for welders. FEATURES ♦Ultrafast Reverse Recovery Time ♦Soft Reverse ...
Rongtech Industry (Shanghai) Inc.,
DC voltage: 2.6 V
Reverse voltage: 600 V
... RFR30F60PN is a Super-Fast Recovery Diode, fabricated in advanced silicon planar epitaxial technology. The process parameter and the device structure are fine tuned with optimized performance ...
Rongtech Industry (Shanghai) Inc.,
DC voltage: 0.9 V
Reverse voltage: 300 V
... RFR60F30APN is an Ultra-Fast Recovery Diode, fabricated in advanced silicon planar epitaxial technology. The process parameter and the device structure are fine tuned with optimized performance ...
Rongtech Industry (Shanghai) Inc.,
DC voltage: 1, 1.15 V
Reverse voltage: 400 V
Feature: Ultrafast Recovery 175°C operating junction temperature High frequency operation Low power loss, less RFI and EMI Low IR value High surge capacity Epitaxial chip construction
Rongtech Industry (Shanghai) Inc.,
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