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Gate driver transformers
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Primary current: 25 mA - 1,000 mA
Galvanic separation of drive and power circuit Voltage resistance up to 8 kV Ignition current up to 3 A Turns ratio up to 3:1 Ignition currents : 0.1 to 3 A Rise time : 0.3 to 2.3 µs Frequency : ≤ 40000 Hz Attenuation performance ...
Primary current: 0.1 A - 3 A
Galvanic separation of drive and power circuit Voltage resistance up to 4 kV Ignition current up to 1 A Turns ratio up to 3:1:1 Ignition currents : 0.1 to 1 A Rise time : 0.4 to 4 µs Frequency : ≤ 40000 Hz Attenuation performance ...
Output power kVA: 100 kVA - 20,000 kVA
Primary voltage: 1,000 V - 52,000 V
Secondary voltage: 200 V - 10,000 V
... Compared to the existing EcoDesign Tier2 Transformers set by the European Community, EcoPlus2030 Transformers boast significantly reduced CO2 emissions and losses. Just like the olive tree, our EcoPlus2030 ...
Tesar Srl
Frequency: 60, 50 Hz
... of cast resin transformers mainly used for energization of rails, metros, highspeed trains, tram- ways, braking energy recovery systems and auxiliary services for sta- tions and signalling. The range of production includes ...
Tesar Srl
Primary voltage: 1,000 V - 52,000 V
Secondary voltage: 200 V - 10,000 V
Frequency: 50 Hz - 60 Hz
Tesar offer a wide range of customized solutions for feeding Data Centres: • Transformers with K factor up to 20 (high harmonic content) • Electrostatic screen between primary and secondary • Simplified Busbars connection ...
Tesar Srl
The production of cast resin power transformers can be divided in: Standard Production, which includes distribution transformers with rated power up to 3.150 kVA and voltage insulation level up to ...
Tesar Srl
Primary voltage: 5 V - 23 V
Secondary voltage: 2,500 V
Primary current: 100 mA - 750 mA
... mount AEC-Q200 Variety of turn ratios Operating temperature:-40 °C up to +125 ºC Automotive approved Applications As a Gate Drive Transformator Transformator for Push Pull DC/DC Converter For isolated interfaces RS 485, CAN
Gate drive transformers for IGBT are the key element in the driver circuit supplying the necessary power for switching and maintaining safe galvanic separation between ...
Vacuumschmelze GmbH & Co. KG
Electric power: 0 kVA
Primary voltage: 0 V
Secondary voltage: 0 V
... progress in this field are turn-off power semiconductors like IGBTs (insulated gate bipolar transistors), MOSFETs (metaloxide semiconductor field-effect transistor) and GTOs (gate turn-off thyristors). ...
Vacuumschmelze GmbH & Co. KG
Electric power: 0 kVA
Primary voltage: 0 V
Secondary voltage: 0 V
... progress in this field are turn-off power semiconductors like IGBTs (insulated gate bipolar transistors), MOSFETs (metaloxide semiconductor field-effect transistor) and GTOs (gate turn-off thyristors). ...
Vacuumschmelze GmbH & Co. KG
Electric power: 0 kVA
Primary voltage: 0 V
Secondary voltage: 0 V
DRIVE TRANSFORMERS FOR IGBT - INSULATION VOLTAGE 600 Vrms TO 2000 Vrms In recent years, power electronics have had a decisive influence on the technology of electrical energy generation, distribution ...
Vacuumschmelze GmbH & Co. KG
Electric power: 0 kVA
Primary voltage: 0 V
Secondary voltage: 0 V
Gate Drive Transformers for IGBT need to ensure excellent switching behavior as well as safe galvanic separation between high and low voltage side. In recent years it has become more ...
Vacuumschmelze GmbH & Co. KG
Electric power: 0 kVA
Primary voltage: 0 V
Secondary voltage: 0 V
Gate Drive Transformers for IGBT need to ensure excellent switching behavior as well as safe galvanic separation between high and low voltage side. VACUUMSCHMELZE developed a new SMD ...
Vacuumschmelze GmbH & Co. KG
Main Features Compact Low profile SMD package Heritage in Space, Defense, Aviation RoHS or SnPb terminations Typical Applications SMPS Inverter Motor Drives
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