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The photodiodes and LEDs from Jenoptik can be easily integrated into your existing systems or adapted to optoelectronic applications, and can also eliminate the need for external filters. Jenoptik Photodiodes ...
Description The high-speed 4X14Gbps photodetector chip is a GaAs positive input PIN structure, characterized by high responsiveness, low capacitance, and low dark current; The size of the photosensitive zone is Φ 55um, the anode and ...
PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.
Description This high data rate 100 Gbps photodiode chip is GaAs top- illuminated PIN structure. Features are high responsibility, low capacitance, low dark current, active area size is Φ38μm, anode and cathode bond ...
PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.
1. High response InGaAs/InP avalanche photodetector, 2. High sensitivity for single photon 3. High gain and low noise 4. Wavelength range from 950nm to 1650nm, 5. 49/125/250um Single-mode fiber coaxial package. Applications 1. ...
PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.
- Digital Diagnostic Devices - Vital Sign Monitoring Features - Package: clear epoxy - ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) - Enhanced green sensititvity - Especially suitable for applications from 400 nm to ...
The S16008 series is a surface mount type Si photodiode with high sensitivity in the visible to near infrared region. This provides higher sensitivity than the previous S2387 series. Features -High sensitivity in ...
HAMAMATSU
Silicon PIN Photodiode FEATURES Package type: surface-mount Package form: 1206 Dimensions (L x W x H in mm): 4 x 2 x 1.05 APPLICATIONS High speed photo detector
The SG01S-18 is a broadband SiC UV photodiode that provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best ...
Scitec Instruments
PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs is fiber coupled packages, of proven manufacture and design. Our Germanium devices are suitable from 800 to 2100nm. All devices are available ...
PD-LD
The DH-Si is a general purpose UV-enhanced silicon photodiode offering excellent linearity and low noise over the wavelength range of 200-1100nm. In addition to its' use throughout the UV-NIR range, the DH-Si, in certain ...
he high-reliability Lumentum 1310/1550 nm 10G XFP ROSA receiver optical sub-assembly (ROSA) product, designed specifically for the XFP transceiver, provides excellent performance over extended operating temperatures in high-speed applications ...
LUMENTUM
Silicon Avalanche Photodiodes Si-APD are suitable for the spectral range from 255 nm to 1100 nm. Wide range of APDs Since the foundation of Laser Components Detector Group Inc. in 2004 we have built a product range ...
LASER COMPONENTS
Report of Signal conditioning for a UV Senso - Gallium Nitride Based Material - Schottky-type Photodiode - Photovoltaic Mode Operation - Good Visible Blindness - High Responsivity & Low Dark Current ...
A photodiode is an electronic component composed of two semiconductors (p-n junction) which transforms light (photons) into an electrical signal (electrons).
ApplicationsThe photodiode is used principally to detect and measure radiation. For example, the indium-gallium-arsenide (InGsAs) photodiode is a near-infrared (NIR) detector used to measure the power of a laser beam, in infrared spectroscopy and in optical communications.
TechnologiesThis device is a member of the photodetector family, as are phototransistors, photoconductors and photovoltaic cells. Many different materials can be used in its fabrication, the choice determining the range of detectable wavelengths. For example, PbSe, InSb and InGaAs versions are sensitive to the infrared spectrum. Most are manufactured using MOS technology, while others use BICOMS or bipolar technologies.
How to chooseThe wavelength to be detected will determine the materials to be used. Constituents also govern photosensitivity. Dark current characteristics also should be considered.
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