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Voltage: 1,700, 2,500, 4,500 V
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching ...
Toshiba offers a wide range of bipolar transistors suitable for various applications, including radio frequency (RF) and power supply devices.
Current: -16.4 A
Voltage: -60 V
P-channel MOSFETs in normal and logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel MOSFETs 60V in DPAK package represents the new technology targeted for battery management, ...
Infineon Technologies AG
... pins (2-16) By customizing the arrangement of socket pins, it can also be used for evaluation of power semiconductors such as IPM and IGBT. Possible for Kelvin measurement Able to select the wiring ...
JC CHERRY INC.
... Temp. Thermoplastic By customizing the arrangement of socket pins, it can also be used for evaluation of power semiconductors such as IPM and IGBT. Possible for Kelvin measurement Able to select ...
JC CHERRY INC.
Power Transistor Sockets Pitch High Temperature Low Outgassing Multi-pole type High reliability round contact providing good electrical and mechanical performance. Power Transistor ...
JC CHERRY INC.
Voltage: 110, 265 V
TOPSwitch-HX incorporates a 700 V power MOSFET, high voltage switched current source, PWM control, oscillator, thermal shutdown circuit, fault protection and other control circuitry onto a monolithic device. Lower System ...
Power Integrations
Current: 800 A
Voltage: 1,200 V
... Energy Storage Systems Solar Inverters Motor Drives Uninterruptible Power Supply Systems (UPS) Features Field Stop Trench 7 IGBTs & Gen.7 Diodes 2 in 1 Half Bridge Configuration IGBT Power ...
Fairchild Semiconductor
Voltage: 7.5 V
... output allowing wide frequency range utilization Integrated ESD protection Integrated stability enhancements Wideband — full power across the band Exceptional thermal performance Extreme ruggedness High linearity for: ...
Current: 95 A
Voltage: 40 V
RH6G040BG is a power MOSFET with low-on resistance and High power package, suitable for switching. Low on - resistance High Power small mold Package(HSMT8) Pb-free plating ; ...
ROHM Semiconductor
Current: 0.4 A - 45 A
Voltage: 36 V - 70 V
... switches (OMNIFET) based on VIPower (vertical intelligent power) technology. This proprietary technology allows integration of complete digital and analog control and protection circuits driving a vertical ...
STMicroelectronics
Current: 150 A - 3,600 A
Voltage: 1,200, 1,700, 3,300, 4,500, 6,500 V
Hitachi Energy's IGBT power modules are available from 1700 to 6500 volt as single, dual / phase-leg, chopper IGBT and dual diode modules. The high-power HiPak IGBT ...
Voltage: -400 V - 1,000 V
Vishay is the world’s number-one manufacturer of low-power MOSFETs. The Vishay Siliconix power MOSFET product line includes devices in more than 30 package types, including the chipscale MICRO FOOT® and ...
Voltage: 0.24 V - 3.5 V
NPN, PNP, and Complementary Transistors Broad portfolio of bipolar NPN and PNP transistors.
Voltage: 45 V
The CENTRAL SEMICONDUCTOR BCX51, BCX52, and BCX53 types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current ...
Central Semiconductor
... Silicon Bipolar RF Transistors and GaAs FETs. The GaAs FET RF transistors are ideal for the first or second stage of base station LNA due to the excellent combination of low noise figure and enhanced ...
Current: 1 A - 5 A
Voltage: 12 V - 400 V
... Bipolar transistors. By utilizing its wide line up of in-house packaging and superior silicon technology, Diodes is ideally positioned to meet your application needs for Bipolar transistors. Continued ...
Current: 25 mA
Voltage: 20 V
Collector Emitter Voltage - Vceo 20 V DC Collector Current - Ic - 25 mA Polarity - pol - NPN Power Dissipation - Ptot - 0.200 W Junction Temperature - Tjmax - 150 °C DC Current Gain - ...
Diotec
Current: 10, 25 A
Voltage: 1,200 V
Features •Trench + Filed Stop IGBT technology •10ps short circuit capability •Versât) with positive temperature coefficient •Low inductance case •Fast & soft reverse recovery anti-parallel FWD •Isolated copper baseplate ...
Rongtech Industry (Shanghai) Inc.,
Features: Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged eXtreme-light Punch Through (XPT™) design results in: - short circuit rated for 10µs. - very low gate charge - low EMI - ...
IXYS
Voltage: 8 V - 35 V
... connected with genset controller via RS485. By mobile APP genset information can be obtained and genset start/stop can be controlled. PERFORMANCE AND CHARACTERISTICS Mobile bluetooth can monitor ...
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