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Silicon transistors
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Voltage: 60 V
NPN Epitaxial Silicon Transistor Applications This product is general usage and suitable for many different applications.
Current: 81 A
Voltage: 1,200 V
SCT4018KE is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit ...
ROHM Semiconductor
Current: 51 A
Voltage: 750 V
SCT4026DW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. Advantages of ROHM's 4th Generation SiC ...
ROHM Semiconductor
Current: 75 A
Voltage: 1,200 V
SCT4018KW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. Advantages of ROHM's 4th Generation SiC ...
ROHM Semiconductor
Current: 31 A
Voltage: 750 V
SCT4045DW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. Advantages of ROHM's 4th Generation SiC ...
ROHM Semiconductor
Current: 24 A
Voltage: 1,200 V
SCT4062KW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. Advantages of ROHM's 4th Generation SiC ...
ROHM Semiconductor
Current: 98 A
Voltage: 750 V
SCT4013DW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. Advantages of ROHM's 4th Generation SiC ...
ROHM Semiconductor
Current: 34 A
Voltage: 750 V
... automotive grade product. SCT4045DRHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. Advantages of ROHM's 4th Generation ...
ROHM Semiconductor
Current: 31 A
Voltage: 750 V
... automotive grade product. SCT4045DW7HR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. Advantages of ROHM's 4th Generation ...
ROHM Semiconductor
Current: 26 A
Voltage: 1,200 V
... automotive grade product. SCT4062KRHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. Advantages of ROHM's 4th Generation ...
ROHM Semiconductor
Current: 24 A
Voltage: 1,200 V
... automotive grade product. SCT4062KW7HR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. Advantages of ROHM's 4th Generation ...
ROHM Semiconductor
Current: 24 A
Voltage: 1,700 V
... High Voltage Structure” (EHVS1) developed to fit High-Definition CRT displays. The new HD product series show improved silicon efficiency bringing updated performance to Horizontal Deflection stage. All features STATE-OF-THE-ART ...
Voltage: 45 V
The CENTRAL SEMICONDUCTOR BCX51, BCX52, and BCX53 types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current ...
Central Semiconductor
Voltage: 50 V
The CENTRAL SEMICONDUCTOR CMPT5086, CMPT5086B, and CMPT5087 are silicon PNP transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications ...
Central Semiconductor
Voltage: 60 V
The CENTRAL SEMICONDUCTOR BCV47 is a silicon NPN Darlington transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely ...
Central Semiconductor
Voltage: 60 V
The CENTRAL SEMICONDUCTOR CMLT3820G is a very low VCE(SAT) NPN Transistor, designed for applications where small size and efficiency are the prime requirements. Packaged in a space saving SOT-563 surface mount package, ...
Central Semiconductor
The CENTRAL SEMICONDUCTOR CMPFJ175 and CMPFJ176 are epoxy molded P-Channel JFETs manufactured in an SOT-23 case, designed for low level amplifier applications. MARKING CODES: CMPFJ175: 6W CMPFJ176: 6X
Central Semiconductor
Voltage: 30 V
The CENTRAL SEMICONDUCTOR CMPFJ175 and CMPFJ176 are epoxy molded P-Channel JFETs manufactured in an SOT-23 case, designed for low level amplifier applications. MARKING CODES: CMPFJ175: 6W CMPFJ176: 6X
Central Semiconductor
Voltage: 40 V
The CENTRAL SEMICONDUCTOR CMPP6027 and CMPP6028 are silicon programmable unijunction transistors, manufactured in a surface mount SOT-23 package, designed for adjustable (programmable) characteristics ...
Central Semiconductor
Current: 200 mA
Voltage: 40 V
The CENTRAL SEMICONDUCTOR CMLM0405 is a single NPN transistor and Schottky diode packaged in a space saving SOT-563 case and designed for small signal general purpose applications where size and operational efficiency ...
Central Semiconductor
Current: 1 A
Voltage: 25, 40, 6 V
... Cameras, Pagers, PDAs, Notebook PCs, etc. FEATURES • Dual Chip Device • High Current (1.0A) Transistor and Schottky Rectifier • Low VCE(SAT) NPN Transistor (450mV @ IC=1.0A MAX) • Low VF Schottky ...
Central Semiconductor
Current: 1 A - 5 A
Voltage: 12 V - 400 V
... Bipolar transistors. By utilizing its wide line up of in-house packaging and superior silicon technology, Diodes is ideally positioned to meet your application needs for Bipolar transistors. Continued ...
Diodes Incorporated
Voltage: 50, 100 V
The FMMT413 is a NPN silicon planar bipolar transistor optimized for avalanche mode operation. Tight process control and low inductance packaging combine to produce high current pulses with fast edges, ...
Diodes Incorporated
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