Magnetic proximity sensor ATS675 series
Hall effectwith switching functionminiature

Magnetic proximity sensor - ATS675 series - ALLEGRO MICROSYSTEMS - Hall effect / with switching function / miniature
Magnetic proximity sensor - ATS675 series - ALLEGRO MICROSYSTEMS - Hall effect / with switching function / miniature
Magnetic proximity sensor - ATS675 series - ALLEGRO MICROSYSTEMS - Hall effect / with switching function / miniature - image - 2
Magnetic proximity sensor - ATS675 series - ALLEGRO MICROSYSTEMS - Hall effect / with switching function / miniature - image - 3
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Characteristics

Technology
magnetic, Hall effect
Output signal
with switching function
Other characteristics
miniature
Measuring range

Min.: 0.5 mm
(0.02 in)

Max.: 3 mm
(0.12 in)

Description

The ATS675 is the next generation of the Allegro® True Power-On State (TPOS) sensor IC family, offering improved accuracy compared to prior generations. The ATS675 provides absolute zero-speed performance and TPOS information. The device incorporates a single-element Hall IC with an optimized custom magnetic circuit that switches in response to magnetic signals created by a ferromagnetic target. The IC contains a sophisticated digital circuit designed to eliminate the detrimental effects of magnet and system offsets. Signal processing is used to provide device performance at zero target speed, independent of air gap, and which adapts dynamically to the typical operating conditions found in automotive applications, particularly camshaft-sensing applications. High resolution peak-detecting DACs are used to set the adaptive switching thresholds of the device, ensuring high accuracy despite target eccentricity. Internal hysteresis in the thresholds reduces the negative effects of anomalies in the magnetic signal (such as magnetic overshoot) associated with targets used in many automotive applications. The resulting output of the device is a digital representation of the ferromagnetic target profile. The ATS675 also includes a low bandwidth filter that increases the noise immunity and the signal-to-noise ratio of the IC.

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