DRAM memory module DDR4
high-speed

DRAM memory module - DDR4 - ATP Electronics - high-speed
DRAM memory module - DDR4 - ATP Electronics - high-speed
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Characteristics

Type
DRAM
Other characteristics
high-speed
Memory capacity

4 GB, 8 GB, 16 GB, 32 GB, 128 GB

Description

ATP's fourth-generation industrial DDR memory combines up to 2666 MT/s data transfer rate and a mere 1.2V power consumption to deliver faster performance at higher power savings over earlier DRAM technologies. As the evolutionary transition from DDR3, DDR4 supports features and functions that are well-suited for increasing bandwidth capabilities to support the growth of online traffic. DDR4-2666 MT/s is the newest generation of fast, performance-oriented DRAM modules optimized for the latest Intel® Xeon® Platinum, Gold, Silver and Bronze Scalable processors and 8th-generation Intel® Core™ i7/i5/i3 processors. The increased interface speed from 2400/MTs to 2666 MT/s amplifies theoretical peak performance by 15% and gives a boost to the most critical computing applications in industries such as telecommunication infrastructures, networking storage systems, network-attached storage (NAS) servers, micro/cloud servers, and embedded systems like industrial PCs. Key Features Density: 2 GB to 128 GB Increased performance and bandwidth (up to 3200 MT/s) Decreased voltage for better power consumption Provides better reliability, availability and serviceability (RAS) and improves data integrity
*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.