Solar cell plating line Meco DPL

direct metallization

For next generation silicon solar cells where the SiNx layer has been opened by laser ablation the Meco Direct Plating Line (DPL) can plate a dense layer of Ni-Ag, Ni-Cu-Ag or Ni-Cu-Sn onto high-ohmic emitters. This results in an efficiency increase up to 1% (abs.) and a tremendous cost reduction (US$/Wp) as no Ag paste is needed anymore for the frontside metallization. Key Features - Vertical product handling - Low drag-out of plating chemicals - Compact machine design/easy to maintain - Inline plating process/high up time - Efficiency improvement : up to 1 % (abs.) with direct metallization - Bill of Materials (BoM) up to 0.05 US$/Wp lower as no more Ag is needed for frontside metallization - Proven machine concept (> 350 machines in semiconductor industry) - Process start-up by Meco Specifications - Cell size: 5 x 5", 6 x 6" - Metal options: Ni-Ag, Ni-Cu-Ag or Ni-Cu-Sn - Seed layer: Silicon emitter (< 120 Ohm/square) - Process speed : 1,500 - 3,000 UPH (pilot line : 100 - 500 UPH) - Production capacity: 50 - 100 MW - Cell efficiency increase: Up to 1% (abs.) - Savings in Ag paste: 100%