Field emission scanning electron microscope HEM6000
laboratoryfor materials analysisfor semiconductors

field emission scanning electron microscope
field emission scanning electron microscope
Add to favorites
Compare this product
 

Characteristics

Type
field emission scanning electron
Technical applications
laboratory, for materials analysis, for semiconductors, for geology
Ergonomics
upright
Observation technique
bright field
Configuration
floor-standing
Electron source
Schottky field emission
Lens design
immersion
Detector type
in-lens SE, back-scattered electron
Options and accessories
computer-assisted
Other characteristics
high-resolution, with wide field of view and long working distance, automated, high-speed, for semiconductors, ultra-high resolution
Magnification

Min.: 66 unit

Max.: 1,000,000 unit

Resolution

Min.: 0.9 nm

Max.: 1.5 nm

1.3 nm

Length

1,716 mm
(67.6 in)

Width

1,235 mm
(48.6 in)

Description

High-speed scanning electron microscope for cross-scale imaging of large-volume specimens CIQTEK HEM6000 facilities technologies such as the high-brightness large-beam current electron gun, high-speed electron beam deflection system, high-voltage sample stage deceleration, dynamic optical axis, and immersion electromagnetic & electrostatic combo objective lens to achieve high-speed image acquisition whilst ensuring nano-scale resolution. The automated operation process is designed for applications such as a more efficient and smarter large-area high-resolution imaging workflow. The imaging speed can reach more than 5 times faster than a conventional field emission scanning electron microscope (fesem). 1. Image Acquisition Speed:10 ns/pixel,2*100 M pixel/s 2. Resolution:1.3 nm@3 kV, SE; 1.5 nm@1 kV, SE,0.9 nm@ 30 kV, STEM 3. Acceleration Voltage:0.1 kV~6 kV (Deceleration Mode),6 kV~30 kV (Non-deceleration Mode) 4. Field of View:Maximum 1*1 mm2,high-resolution minimum distortion 64*64 um2 5. Stage Repeatability:X ±0.6 um,Y ±0.3 um 6. Signal Electron Filtering System:SE/BSE signal-free switching, mixing with adjustable ratio 7. Fully Electrostatic High-Speed Beam Deflection System:High-resolution large field imaging achievable Maximum. Field of view up to 32um*32 um at 4 nm per-pixel 8. Sample Stage Deceleration Technology:Reduce incident electron landing voltage, increasing signal electron capturing efficiency 9.Electromagnetic & Electrostatic Combo Immersion Objective Lens Beam Deflection System:Objective lens magnetic field immerses sample, contributes low-aberration high-resolution imaging
*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.