NAND memory chip 69FxxG16

asynchronous

DDC 64, 128, and 256 Gb high density NAND flash features a x16 wide bus. This NAND flash uses Single-Level Cell (SLC) NAND technology. Storing 1 bit of data per memory cell, SLC NAND offers fast read and write capabilities and boot times, excellent endurance and reliability. DDC patented RAD-PAK packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding, while providing the required radiation shielding for a lifetime in orbit or space mission. RAD-PAK provides a greater than 100 krads(Si) total dose tolerance, depending on space mission. This product is available with screening up to DDC Microelectronics self-defined Class S. High density 64, 128, or 256 Gb Supports higher speed designs with less capacitance/fewer I/O's to drive NAND Flash Interface Single Level Cell (SLC) Technology ONFI 2.2 Compliant Operating Voltage VCC 3.0 to 3.6V VCCQ 1.7 to 1.95V or 3.0 to 3.6V Page Size 8640 bytes (8192 + 448 spare bytes) Supports external BCH correction algorithms (16 bit correction per 540 bytes) Features High reliability data storage for demanding space applications Ceramic hermetic package with built-in TID shielding Class E, I, H or K Speed Up to asynchronous timing mode 5 (50MT/sec) Temperature Range -55°C to 125°C Endurance 60,000 cycles typical