Plasma surface treatment machine EVG®810LT LowTemp™

The EVG810LT LowTemp™ Plasma Activation System is a single chamber, stand-alone unit with manual operation. The process chamber allows for ex situ processes (wafers are activated one by one and bonded outside the plasma activation chamber). Features Surface plasma activation for low temperature bonding (fusion/molecular and intermediate layer bonding) Fastest kinetics of any wafer bonding mechanism No wet processes required Highest bond strength at low temperature annealing (up to 400°C) Applicable for SOI, MEMC, compound semiconductors, and advanced substrates bonding High degree of materials compatibility (including CMOS) Technical Data Wafer diameter (substrate size) 50 - 200, 100 - 300 mm LowTemp™ plasma activation chamber Process gases: 2 standard process gases (N2 and O2) Universal mass flow controller: self-calibrating (up to 20.000 sccm) Vacuum system: 9x10-2 mbar Opening / closing of chamber: automated Loading / unloading of chamber: manual (wafer / substrate placed on loading pins) Optional features Chuck for different wafer sizes Metal ion-free activation Additional process gases with gas mixing High vacuum system with turbo pump: 9x10-3 mbar base pressure