Silicon carbide MOSFET NCS025M3E120NF06 series

SiC

onsemi is proud to offer the 3rd generation of EliteSiC Silicon Carbide (SiC) MOSFETs in bare die format - optimized for use in high power applications such as EV Traction inverters, DC-DC converters, and off-board chargers. Based on the latest generation of SiC MOSFET technology from onsemi, the M3e product family offers the lowest on-resistance in its class, with optimized top and back metal options suitable for multiple packaging technologies including soldering, sintering, wire-bond, die top copper, and ribbon bonds. By utilizing onsemi's M3e product, packaging flexibility helps to reduce the system size, weight, application complexity, while increase power density and efficiency in traction inverter applications of electric vehicles. Moving from silicon based solutions to silicon carbide based solutions helps to improve efficiency and range by up to 5% in battery electric vehicle traction inverters. Applications Main Traction Inverter Applications High Voltage DC/DC Converters Off-Board Chargers End Products 1200V SiC MOSFET Bare Dice Features 3rd Generation SiC MOSFET High Blocking Voltage 1200V Low Conduction Losses Over Temperature