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IGBT transistor module NXH800H120L7QDSGpowerswitching
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Characteristics
- Type
- IGBT
- Technology
- switching, power
- Current
800 A
- Voltage
1,200 V
Description
The NXH800H120L7QDSG is a rated half bridge IGBT power module. The integrated Field Stop Trench 7 IGBTs and Gen. 7 diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.
Applications
DC-AC conversion
DC-DC conversion
AC-DC conversion
End Products
Energy Storage Systems
Solar Inverters
Motor Drives
Uninterruptible Power Supply Systems (UPS)
Features
Field Stop Trench 7 IGBTs & Gen.7 Diodes
2 in 1 Half Bridge Configuration IGBT Power Module
Isolated Base Plate
NTC Thermistor
Solderable Pins
Low Inductive Layout
Catalogs
No catalogs are available for this product.
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Discrete & Power Modules
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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.