IGBT transistor module SNXH800H120L7QDSG
powerswitching

IGBT transistor module - SNXH800H120L7QDSG - Fairchild Semiconductor - power / switching
IGBT transistor module - SNXH800H120L7QDSG - Fairchild Semiconductor - power / switching
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Characteristics

Type
IGBT
Technology
switching, power
Current

800 A

Voltage

1,200 V

Description

The SNXH800H120L7QDSG is a rated half bridge IGBT power module. The integrated Field Stop Trench 7 IGBTs and Gen. 7 diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Applications DC-AC conversion DC-DC conversion AC-DC conversion End Products Commercial Agriculture Vehicles (CAV) Features Field Stop Trench 7 IGBTs & Gen.7 Diodes 2 in 1 Half Bridge Configuration IGBT Power Module Isolated Base Plate NTC Thermistor Solderable Pins Low Inductive Layout

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