Ultraviolet laser cutting machine LUD3200

for monocrystalline siliconwaferCNC

Ultra violet picosecond laser is used for precision half cutting or full cutting of silicon and compound semiconductor wafers. • High quality Cutting line width is narrow (taking ultraviolet collimation as an example, cutting line width + HAZ ≤ 20 ± 5 μ m) Small edge collapse (≤ 10 μ m） • High efficiency UPH ≥ 10 (UV galvanometer: take 3-inch double mesa silicon diode wafer as an example, including automatic alignment time) • Good stability The laser has high pulse stability (≤ 2% RMS) and high beam quality (M ² ≤1.2) Sample display： Cutting front - 3-inch double mesa diode wafer laser full cutting; Grain size: 300 * 300 μm, Wafer thickness 130 μm, Cutting channel thickness 30 μm.