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Photodiode laser power detector PH100-SI-HA-OD2-D0

photodiode laser power detector
photodiode laser power detector
photodiode laser power detector
photodiode laser power detector
photodiode laser power detector
photodiode laser power detector
photodiode laser power detector
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photodiode

Description

LARGE APERTURES 10 mm Ø for the silicon sensors 3 VERSIONS • Silicon 350 - 1080 nm, up to 750 mW • Silicon-UV 210 - 1080 nm, up to 38 mW • Germanium 800 - 1650 nm, up to 500 mW CHOICE OF ATTENUATORS • OD0.3: 50% transmission (for PH100-SIUV only) • OD1: 10% transmission • OD2: 1% transmission HIGH ACCURACY The new PH100-SI-HA presents the lowest calibration uncertainty to date. PRECISE CALIBRATION Wavelength selection in 1 nm steps SMART INTERFACE Containing all the calibration data MEASUREMENT CAPABILITIES Maximum average power1 750 mW Noise equivalent power2 2 nW Spectral range 630 - 1080 nm Typical rise time 0.2 s Power calibration uncertainty3 ±4.0 % (630 - 899 nm) ±5.0 % (900 - 1009 nm) ±7.5 % (1010 - 1080 nm) Peak sensitivity 980 nm Minimum repetition rate4 155 kHz 1. At 1064 nm, with attenuator. See curves for maximum power at other wavelengths. 2. At 980 nm. Nominal value. Actual value depends on environmental electromagnetic interference and wavelength. 3. With attenuator. See user manual for calibration uncertainty without attenuator. 4. See user manual for details.

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