Photodiode laser power detector PH100-SI-HA-D0

LARGE APERTURES 10 mm Ø for the silicon sensors 3 VERSIONS • Silicon 350 - 1080 nm, up to 750 mW • Silicon-UV 210 - 1080 nm, up to 38 mW • Germanium 800 - 1650 nm, up to 500 mW CHOICE OF ATTENUATORS • OD0.3: 50% transmission (for PH100-SIUV only) • OD1: 10% transmission • OD2: 1% transmission HIGH ACCURACY The new PH100-SI-HA presents the lowest calibration uncertainty to date. PRECISE CALIBRATION Wavelength selection in 1 nm steps SMART INTERFACE Containing all the calibration data Maximum average power1 36 mW Noise equivalent power2 10 pW Spectral range 350 - 1080 nm Typical rise time 0.2 s Power calibration uncertainty ±5.0 % (350 - 399 nm) ±2.0 % (400 - 449 nm) ±1.5 % (450 - 809 nm) ±2.0 % (810 - 899 nm) ±4.0 % (900 - 1009 nm) ±7.5 % (1010 - 1080 nm) Peak sensitivity 0.5 A/W @ 980 nm Minimum repetition rate3 155 kHz 1. At 1064 nm. See curves for maximum power at other wavelengths. 2. At 980 nm. Nominal value. Actual value depends on environmental electromagnetic interference and wavelength. 3. See user manual for details.