Infrared photodiode S16008-33
silicon

infrared photodiode
infrared photodiode
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Characteristics

Type
silicon, infrared

Description

Photodiode for general photometry in visible to near infrared range The S16008-33 is a surface mount type Si photodiode with high sensitivity in the visible to near infrared range. This provides higher sensitivity than the previous S2387 series. Features -High sensitivity in visible to near infrared range -Low dark current -Superior linearity -Compatible with lead-free solder reflow Specifications Photosensitive area : 2.4 × 2.4 mm Number of elements : 1 Package : Glass epoxy Package category : Surface mount type Cooling : Non-cooled Spectral response range : 380 to 1100 nm Peak sensitivity wavelength (typ.) : 960 nm Photosensitivity (typ.) : 0.64 A/W Dark current (max.) : 5 pA Rise time (typ.) : 1.5 μs Terminal capacitance (typ.) : 700 pF Noise equivalent power (typ.) : 9.0 × 10-16 W/Hz1/2 Measurement condition : Ta=25 ℃, Typ., Photosensitivity: λ=λp, Dark current: VR=10 V, Rise time: VR=0 V, RL=1 kΩ, 10 to 90%, Terminal capacitance: VR=0 V, f=10 kHz, Noise equivalent power: VR=0 V, λ=λp, unless otherwise noted

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