Silicon photodiode S14124-20
avalanche

Silicon photodiode - S14124-20 - HAMAMATSU - avalanche
Silicon photodiode - S14124-20 - HAMAMATSU - avalanche
Add to favorites
Compare this product
 

Characteristics

Type
avalanche, silicon

Description

High-sensitivity Si APD for detection of light with a wavelength of 266 nm The S14124-20 is an improved Si APD from the S8664 series for high sensitive detection of light with a wavelength of 266 nm used in semiconductor inspection and laser processing equipment. We have achieved a quantum efficiency of 87% at λ=266 nm. Features - High sensitivity, quantum efficiency: 87% (λ=266 nm) - Low capacitance - Low noise - High gain Specifications Type : Short wavelength type (low terminal capacitance) Photosensitive area : φ2.0 mm Package : Metal Package Category : TO-8 Peak sensitivity wavelength (typ.) : 600 nm Dark current (max.) : 10 nA Cutoff frequency (typ.) : 250 MHz Terminal capacitance (typ.) : 11 pF Breakdown voltage (typ.) : 400 V Temperature coefficient of breakdown voltage (typ.) : 0.78 V/℃ Gain (typ.) : 400 Measurement condition : Typ. Ta=25 ℃, unless otherwise noted

Catalogs

*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.