InGaAs photodiode G14858-0020AA

avalanche

InGaAs APD that greatly reduces dark current This InGaAs APD (avalanche photodiode) greatly reduces dark current over existing products by the use of a new device structure and improved processing. The G14858-0020AA is used for distance measurement, low-light-level detection, and so on. Features - Low dark current - Low capacitance - High sensitivity Specifications Number of elements : 1 Photosensitive area : φ0.2 mm Package : Metal Package Category : TO-18 Spectral response range : 950 to 1700 nm Peak sensitivity wavelength (typ.) : 1550 nm Photosensitivity (typ.) : 0.8 A/W Dark current (max.) : 50 nA Cutoff frequency (typ.) : 900 MHz Terminal capacitance (typ.) : 2 pF Breakdown voltage (typ.) : 65 V Temperature coefficient of breakdown voltage (typ.) : 0.1 V/℃ Measurement condition : Ta=25℃, Photosensitivity: λ=1.55 μm, M=1