Infrared photodiode S15137

PIN

Si photodiode for visible to infrared photometry The S15137 is a Si PIN photodiode developed for YAG lasers (1.06 µm). The photosensitivity at 1.06 µm is 0.52 A/W (typ.), which is about 1.5 times higher than that of previous products. The PIN structure allows high-speed response and low capacitance. The photosensitive area is as large as φ5 mm, making optical axis alignment easier. Features -High sensitivity in infrared region: 0.52 A/W (λ=1.06 µm) -High-speed response: tr=12.5 ns (VR=100 V) -Low capacitance: Ct=10 pF (VR=100 V) -Large photosensitive area: φ5 mm -High reliability: TO-8 metal package Specifications Photosensitive area : φ5.0 mm Number of elements : 1 Package : Metal Package category : TO-8 Cooling : Non-cooled Reverse voltage (max.) : 150 V Spectral response range : 360 to 1120 nm Peak sensitivity wavelength (typ.) : 1000 nm Photosensitivity (typ.) : 0.52 A/W Dark current (max.) : 10000 pA Rise time (typ.) : 0.0125 μs Terminal capacitance (typ.) : 10 pF Measurement condition : Ta=25 ℃, Typ., Photosensitivity: λ=1060 nm, Dark current: VR=100 V, Rise time: VR=100 V, RL=50 Ω, λ=1060 nm, 10 ～ 90%, Terminal capacitance: VR=100 V, f=10 kHz, unless otherwise noted