Infrared microscope C10506-05-16

inspectioninvertednear-infrared

The inverted emission microscope is a backside analysis system designed to identify failure locations by detecting the light and heat emitted from the defects in semiconductor devices. The signal detection from backside facilitates the use of probing and probe card to the wafer surface, and the sample setting can be performed smoothly. The platform, possible to mount multiple detectors and lasers, enables the selection of the optimum detector for performing various analysis methods such as light emission and heat generation analysis, IR-OBIRCH analysis, and others; moreover, letting dynamic analysis perform efficiently by tester connection. ●iPHEMOS-DD By connecting directly to the LSI tester, signal delay due to the connection cable length can be reduced, and the analysis of high-speed driving samples is possible. Direct docking dedicated prober enables multi-pin needle attachment to 300 mm wafers and with the additional option, it is possible to perform package analysis as well as pin-needle attachment by a manipulator. Features • Two ultra-high sensitivity cameras mountable for emission analysis and thermal analysis • Lasers for up to 3 wavelengths and a probe light source for EOP are mountable • Multi-platform capable of mounting multiple detectors • High sensitivity macro lens and up to 10 lenses suitable for each detector sensitivity wavelength Options • Includes laser scan system • Emission analysis with high-sensitivity near-infrared camera • Thermal analysis with high-sensitivity mid-infrared camera • IR-OBIRCH analysis • Dynamic analysis by laser irradiation • EO probing analysis • High-resolution and high-sensitivity analysis using NanoLens