Silicon photodiode S14643-02
LIDAR

silicon photodiode
silicon photodiode
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Characteristics

Type
silicon, LIDAR

Description

High speed, compact Si APD for LiDAR (700 nm band) featuring low-bias operation This Si APD is suitable for detecting light in the 700 nm band, which is increasingly used in optical rangefinders. With the same shape as the previous product (S10341 series), this Si APD features less variation in breakdown voltage, reduced dark current, and expanded storage and operating temperatures. Features - Small package: 3.1 × 1.8 × 1.0t mm - Peak sensitivity wavelength: 760 nm (M=100) - Low bias operation: Breakdown voltage=120 V max. - High-speed response: Cutoff frequency=2 GHz typ. (λ=760 nm, M=100) - Reduction of breakdown voltage variation: 100 ± 20 V Specifications Type : For LiDAE (700 nm band, Low bias operation) Photosensitive area : φ0.2 mm Package : Plastic Package Category : Surface mount type Peak sensitivity wavelength (typ.) : 760 nm Spectral response range : 400 to 1000 nm Photosensitivity (typ.) : 0.48 A/W Dark current (max.) : 0.2 nA Cutoff frequency (typ.) : 2000 MHz Terminal capacitance (typ.) : 0.7 pF Breakdown voltage (typ.) : 100 V Temperature coefficient of breakdown voltage (typ.) : 0.42 V/℃ Gain (typ.) : 100 Measurement condition : Typ. Ta=25 ℃, unless otherwise noted, Photosensitivity: λ=760 nm, M=1

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