Silicon photodiode S14644-02

LIDAR

High speed, compact Si APD for LiDAR (800 nm band) featuring low-bias operation This Si APD is suitable for detecting light in the 800 nm band, which is increasingly used in optical rangefinders. With the same shape as the previous product (S10341 series), this Si APD features less variation in breakdown voltage, reduced dark current, and expanded storage and operating temperatures. Features - Small package: 3.1 × 1.8 × 1.0t mm - Peak sensitivity wavelength: 800 nm (M=100) - Low bias operation: Breakdown voltage=180 V max. - High-speed response: Cutoff frequency=1.2 GHz typ. (λ=800 nm, M=100) - Reduction of breakdown voltage variation: 160 ± 20 V Specifications • Type : For LiDAR • (800 nm band, Low bias operation) • Photosensitive area : φ0.2 mm • Package : Plastic • Package Category : Surface mount type • Peak sensitivity wavelength (typ.) : 800 nm • Spectral response range : 400 to 1000 nm • Photosensitivity (typ.) : 0.52 A/W • Dark current (max.) : 0.3 nA • Cutoff frequency (typ.) : 1200 MHz • Terminal capacitance (typ.) : 0.6 pF • Breakdown voltage (typ.) : 160 V • Temperature coefficient of breakdown voltage (typ.) : 0.63 V/℃ • Gain (typ.) : 100