Silicon photodiode S14645-02
LIDAR

silicon photodiode
silicon photodiode
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Characteristics

Type
silicon, LIDAR

Description

High speed, compact Si APD for LiDAR (900 nm band) featuring low-bias operation This Si APD is suitable for detecting light in the 900 nm band, which is increasingly used in optical rangefinders. With the same shape as the previous product (S12926 series), this Si APD features less variation in breakdown voltage, reduced dark current, and expanded storage and operating temperatures. Features - Small package: 3.1 × 1.8 × 1.0t mm - Peak sensitivity wavelength: 840 nm (M=100) - Low bias operation: Breakdown voltage=195 V max. - High-speed response: Cutoff frequency=600 MHz typ. (λ=900 nm, M=100) - Reduction of breakdown voltage variation: 175 ± 20 V Specifications Type : For LiDAR (900 nm band, Low bias operation) Photosensitive area : φ0.2 mm Package : Plastic Package Category : Surface mount type Peak sensitivity wavelength (typ.) : 840 nm Spectral response range : 400 to 1100 nm Photosensitivity (typ.) : 0.5 A/W Dark current (max.) : 0.4 nA Cutoff frequency (typ.) : 600 MHz Terminal capacitance (typ.) : 0.5 pF Breakdown voltage (typ.) : 175 V Temperature coefficient of breakdown voltage (typ.) : 1.1 V/℃ Gain (typ.) : 100 Measurement condition : Typ. Ta=25 ℃, unless otherwise noted, Photosensitivity: λ=900 nm, M=1

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