Avalanche photodiode (APD) module S2384

avalanche photodiode (APD) module
avalanche photodiode (APD) module
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Description

Low bias operation, for 800 nm band - Stable operation at low bias - High-speed response - High sensitivity and low noise Type : Near infrared type (Low bias operation) Photosensitive area : φ3 mm Package : Metal Package Category : TO-5 Peak sensitivity wavelength (typ.) : 800 nm Spectral response range : 400 to 1000 nm Photosensitivity (typ.) : 0.5 A/W Dark current (max.) : 10 nA Cutoff frequency (typ.) : 120 MHz Terminal capacitance (typ.) : 40 pF Breakdown voltage (typ.) : 150 V Temperature coefficient of breakdown voltage (typ.) : 0.65 V/℃ Gain (typ.) : 60 Measurement condition : Typ. Ta=25 ℃, unless otherwise noted, Photosensitivity: λ=800 nm, M=1

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