The PHEMOS-X is a high-resolution emission microscope that pinpoints failure locations in semiconductor devices by detecting the weak light emissions and heat emissions caused by defects.
Two ultra-high sensitivity cameras are mountable
Coverage of different detection wavelength ranges for emission analysis and thermal analysis allows easy selection of an analysis technique that matches the sample and failure mode.
Up to 5 light sources for OBIRCH, DALS and EOP are mountable
High accuracy stage designed for advanced devices
The PHEMOS-X superimposes the emission image on a high-resolution pattern image to localize defect points quickly.
The contrast enhancement function makes an image clearer and more detailed.
Display function
Annotations: Comments, arrows, and other indicators can be displayed on an image at any location desired.
Scale display: The scale width can be displayed on the image using segments.
Grid display: Vertical and horizontal grid lines can be displayed on the image.
Thumbnail display: Images can be stored and recalled as thumbnails, and image information such as stage coordinates can be displayed.
Split screen display: Pattern images, emission images, superimposed images, and reference images can be displayed in a 6-window screen at once.