Cobalt disilicide (CoSi2) has low resistivity and good thermal stability. It is currently widely used as a contact in large-scale integrated circuits, and CoSi2 has a crystal structure similar to Si, so epitaxial CoSi2 can be formed on a Si substrate /Si structure, used to study the interface characteristics of epitaxial metal silicon.
Molecular weight:115.104
Density:4.9 g/cm3
Colour:gray
Melting point:1326 °C
Boiling point:5100ºC
EINECS (EC NO.):234-616-8
Cobalt disilicide (CoSi2) has low resistivity and good thermal stability. It is currently widely used as a contact in large-scale integrated circuits, and CoSi2 has a crystal structure similar to Si, so epitaxial CoSi2 can be formed on a Si substrate /Si structure, used to study the interface characteristics of epitaxial metal silicon.
1.High purity: the highest purity can reach 99.99%, XRD detect no impurity phase;
2.Concentrated distribution: standard normal particle size distribution, no bimodal or multimodal.