DRAM memory module H5UG7HME03X020R

DDR5

Ultimate DRAM for New Horizons of High-end Memory World’s First HBM3 Developed in October 2021 In just 15 months since launching HBM2E mass production, SK hynix solidified its leadership in high-speed DRAM by developing an HBM3, the latest in high-bandwidth memory for cutting-edge technologies across datacenters, supercomputers, and AI. Advanced Thermal Dissipation HBM3 runs at lower temperatures than HBM2E at the same level of operating voltage, enhancing stability of the server system environment. At equivalent operating temperatures, SK hynix HBM3 can support 12-die stacks or 1.5x capacity than HBM2E, and 6Gbps I/O speeds for 1.8x higher bandwidth. With greater cooling capacity for the same operating conditions thus, SK hynix delivers on its Memory ForEST* initiative. Performance Boost SK hynix HBM3, with 1.5x capacity than HBM2E from 12 DRAM die stacked to the same total package height, is fit to power capacity-intensive applications such as AI and HPC. A single cube can yield up to 819GB/s in bandwidth, while an SiP (System-in-Package) with six HBM chips on the same silicon can achieve up to 4.8TB/s in support of exascale demands. On-die ECC SK hynix HBM3 also features a robust and custom-designed on-die ECC (Error Correcting Code), which uses pre-allocated parity bits to check and correct errors in data received. The embedded circuitry allows DRAM to self-correct errors within cells, significantly enhancing device reliability.