Memory module HBM3E

HBM3E Continues Leading the AI Market SK hynix launched HBM3E to solidify it’s unrivaled leadership in AI memory market following its success with HBM3. The extended version of HBM3 helps accelerate business turnaround with its supply following industry’s largest scale of mass production of HBM. 10% Improved Thermal Resistance & Power Efficiency SK hynix was the first to develop the MR-MUF (Mass Reflow-Molded Underfill) packing technology. This technique, which simultaneously bonds the chips together via reflow while filling the gaps with liquid material is significant in development of the highly thermal-conducive HBM. Together with technology on chip control, not only is wafer warpage prevented, but a new fill material was added to further better dissipate heat. Advanced MR-MUF has enhanced heat dissipation of HBM3E by 10% compared to the previous generation, while power efficiency has also improved by 10%. x1.5 Capacity & Bandwidth with Same Package Size HBM3E provides maximum capacity of 36GB and maximum per-pin data rate is 9.2Gbps, where maximum bandwidth exceeds 1.18TB per second, which is a 1.4times improvement compared to HBM3 both in terms of capacity and bandwidth.