MOSFET transistor power
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Characteristics
- Type
- MOSFET
- Technology
- power
Description
Features
Silicon chip on Direct-Copper-Bond
substrate
- high power dissipation
- isolated mounting surface
- 2500 V electrical isolation
- low drain to tab capacitance (< 40 pF)
Fast CoolMOS™ 1) power MOSFET 4th
generation
- high blocking capability
- lowest resistance
- avalanche rated for unclamped
inductive switching (UIS)
- low thermal resistance
due to reduced chip thickness
Enhanced total power density
SiC Boost Diode
- no reverse recovery current
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