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Electron beam lithography system JBX-3200MV

electron beam lithography system
electron beam lithography system
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Characteristics

Type
electron beam

Description

JBX-3200MV is a variable-shaped electron beam lithography system for mask making of 28 nm to 22/20 nm nodes. Its cutting-edge technology achieves high speed, high precision and high reliability. This EB system uses a variable-shaped 50 kV electron beam and a step-and-repeat specimen stage. Features Utilizing the merit of the step-and-repeat writing method, this EB system combines various functions such as the writing-dose modulation function and the overlay-writing function, thus making it possible to support versatile corrections required for patterning the next-generation masks and reticles. Captive mask shops and merchant mask shops in Japan and overseas (Customer names are not disclosed)

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