Optical measurement system LMS IPRO series

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Reticle Pattern Registration Metrology Systems The LMS IPRO7 reticle registration metrology system is designed to provide accurate and fast verification of the pattern placement performance on EUV and optical reticles for the 7nm design node. By offering comprehensive characterization of reticle pattern placement error, the LMS IPRO7 produces data used for e-beam mask writer corrections and reticle quality control during the development and production of advanced design node reticles. Using KLA’s proprietary model-based metrology algorithm, the LMS IPRO7 measures pattern placement error for both targets and multiple on-device pattern features with high accuracy, enabling characterization and reduction of reticle-related contributions to device overlay errors in the IC fab. Applications Reticle qualification, Outgoing reticle quality check, Mask writer qualification and monitoring, Reticle process monitoring, Wafer patterning control Related Products LMS IPRO6: Mask metrology system for the 10nm design node, supporting measurement on both standard registration marks and on-device pattern features. LMS IPRO4: Mask metrology system for the 32nm/28nm design nodes. With industry-unique flexible handling capability, the LMS IPRO4 supports mask sizes from 4” to 8”. Click the Contact Us button for more information about new and refurbished systems.