Plasma Enhanced Chemical Vapor Deposition (PECVD) is a process which uses the energy within the plasma to accelerate chemical reactions at the wafer surface to produce thin films at temperatures below 400°C. Energetic ion bombardment during deposition can be used to tailor the films’ electrical and mechanical properties. The SPTS Delta™ PECVD systems are used for a wide range of applications within the advanced packaging, RF, power, photonics and MEMS markets, particularly in applications where a low processing temperature is required. The Delta™ fxP cluster system offers a comprehensive library of processes for a wide range of dielectric films and with deposition temperatures from 80°C to 400°C. The system also offers single and multi-wafer preheat chamber options for de-gassing sensitive substrates and edge contact processing capability for wafer back side deposition.
• SiCN for hybrid bonding & thick SiO for inter-die gapfill
• TSV liners and via-reveal passivation
• SiN passivation for power chips with low power, low damage option for GaN
• Low temperature back side films with bow compensation
• Highly uniform SiN for MIM capacitor and GaAs device passivation.
• Tuned RI and doped films for active and passive photonics