This large-batch, diffusion, LPCVD, vertical furnace performs 4- to 8-inch wafer ultra-high-temperature treatment. The system can be flexibly configured to enable your production line to process a variety of products. This furnace excels at power device manufacturing.
Features
Flexible equipment configuration is available for various production lines
50 to 150 wafers batch size can be selected
4- to 8-inch wafer size is available
4 to 8 cassette stocks
Excellent temperature control from low to medium high temperature range using an LGO heater
High-speed wafer transfer using a single/five wafers handling robot
Equipped with an operator-friendly high performance control system
This vertical furnace for 4- to 8-inch wafers flexibly meets your production line needs. You can choose the number of wafers to process from 50 to 150. You choose the heater from an LGO heater, molybdenum disilicide (MoSi2) heater and carbon heater so the furnace can be used for not only low-temperature annealing, nitride (Si3N4), polysilicon (poly Si) and other material LPCVD, oxidation and diffusion processing but also for SiC power device gate silicon oxynitriding, activation annealing and other ultra-high-temperature processing.