This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.
Features:
AEC-Q101 qualified
Positive temperature coefficient for safe operation and ease of paralleling
175 °C maximum operating junction temperature
Excellent surge capability
Extremely fast, temperature-independent switching behavior
Dramatically reduced switching losses compared to Si bipolar diodes
Applications:
Boost diodes in PFC or DC/DC stages
Switch-mode power supplies
Uninterruptible power supplies
Solar inverters
Industrial motor drives
EV charging stations