Chamber furnace TA-200
meltingcrystal growthelectric

chamber furnace
chamber furnace
chamber furnace
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Characteristics

Configuration
chamber
Function
melting, crystal growth
Heat source
electric
Maximum temperature

Max.: 3,500 °C
(6,332 °F)

Min.: 0 °C
(32 °F)

Description

Our lowest cost furnace to grow lab-sized crystals with the Czochralski method is our Arc Melt Furnace TA-200 with the Crystal Growth option. This option adds all components used to grow single crystals of semiconductor materials (Silicon, Germanium and Gallium Arsenide), metals, salts and synthetic gemstones. This furnace uses three electric arcs capable of melting materials above 3500°C. A crystal seed attached to the seed rod then lowers into the 2″ (50 mm) crucible holding the melt. The controls are programmed to pull the growing crystal. The pulling speed is adjustable and controls accurately as low as 0.001 mm/min. A separate motor is provided to rotate the 3/8” seed rod, the maximum pull height is 7″ (176 mm). The bottom crucible is also available with a rotational motor.
*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.