- Electricity - Electronics
- Electronic Component
- Power microchip
- Microchip Technology Inc.
MOSFET integrated circuit LND150power
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Characteristics
- Options
- power, MOSFET
Description
The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.
Product Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source-drain diode
High input impedance and low CISS
ESD gate protection
Parametrics
BVdss min (V) - 500
Rds (on) max (Ohms) - 1000
Vgs(off) Min (V (volt)) - -1.0
Vgs(off) Max (V (volt)) - -3.0
Package - SOT-23, TO-92, SOT-89
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Interface and Connectivity
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