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Power amplifier AFIC901N
ruggedwide-bandhigh-gain

Power amplifier - AFIC901N - NXP Semiconductors - rugged / wide-band / high-gain
Power amplifier - AFIC901N - NXP Semiconductors - rugged / wide-band / high-gain
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Characteristics

Type
power
Other characteristics
rugged, wide-band, high-gain
Voltage

7.5 V

Frequency

Min.: 2 MHz

Max.: 1,000 MHz

Description

The AFIC901N is a 2-stage, high gain amplifier designed to provide a high level of flexibility to the amplifier designer. The device is unmatched even at the interstage, allowing performance to be optimized for any frequency in the 1.8 to 1000 MHz range. The high gain, ruggedness and wideband performance of this device make it ideal for use as a pre-driver and driver in a wide range of industrial, medical and communications applications. Features Characterized for Operation from 1.8 to 1000 MHz Unmatched Input, Interstage and Output Allowing Wide Frequency Range Utilization Integrated ESD Protection Same PCB Layout Can be Used for 136-174 MHz, 350-520 MHz and 760-870 MHz Designs. 24-pin, 4 mm QFN Plastic Package RoHS Compliant This product is included in our product longevity program with assured supply for a minimum of 15 years after launch. Typical Applications Driver for Mobile Radio Power Amplifiers Output Stage for Low Power Handheld Radios Driver for Communications and Industrial Systems

Catalogs

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Exhibitions

Meet this supplier at the following exhibition(s):

MWC 2025
MWC 2025

3-06 Mar 2025 Barcelona (Spain) Hall 2.1 - Stand 2.1C29Ex,2.1C31Ex,2.1C33Ex

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    *Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.