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Power transistor module AFM906N

Power transistor module - AFM906N - NXP Semiconductors
Power transistor module - AFM906N - NXP Semiconductors
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Characteristics

Technology
power
Voltage

7.5 V

Description

The AFM906N is designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications in handheld radio equipment The AFM906N is designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications in handheld radio equipment. Less Features Characterized for operation from 136 to 941 MHz Unmatched input and output allowing wide frequency range utilization Integrated ESD protection Integrated stability enhancements Wideband — full power across the band Exceptional thermal performance Extreme ruggedness High linearity for: TETRA, SSB RoHS compliant Typical Applications Output stage VHF band handheld radio Output stage UHF band handheld radio Output stage for 700-800 MHz handheld radio Generic 6 W driver for ISM and broadcast final stage transistors

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Exhibitions

Meet this supplier at the following exhibition(s):

MWC 2025
MWC 2025

3-06 Mar 2025 Barcelona (Spain) Hall 2.1 - Stand 2.1C29Ex,2.1C31Ex,2.1C33Ex

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    *Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.