SMD phototransistor OIT18C-NR
silicon

SMD phototransistor - OIT18C-NR - Optoi Microelectronics - silicon
SMD phototransistor - OIT18C-NR - Optoi Microelectronics - silicon
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Characteristics

Other characteristics
SMD, silicon
Current

1 mA

Voltage

80 mV

Description

OIT18C-NR 13-ch. phototransistor array 0.45mm optical pitch on plastic SMD package General Description OIT18C consists in a silicon phototransistor’s monolithic array of 13 elements. The phototransistors have a common collector on the back substrate, which is tied to two pads and every emitter is accessible to specific pad. The optical pitch of the array is 0.45 mm, the LCC package electrical pitch is 1.27 mm. The active area of each element is 0.25 x 0.50 mm2. The advantages of this product are the high uniformity of the silicon sensors, due to the monolithic construction and to the extremely controlled microelectronic process, the high stability of the signal and the high optical responsivity, due to the antireflective coating deposited on the phototransistor’s areas. The device is protected with a thin plastic film, that is resistant to reflow oven processes. The film has to be removed once the device has been assembled on the electronic board and the user can attach the optical reticle. Two reference marks are available for the precise positioning of the reticle. Applications Optical encoders 13 bit absoulte encoders Optical Receivers Controls/drives Light sensors Features Resistant to soldering processes, MSL2  High uniformity of silicon cells (< 10%)  Monolithic construction  Low optical pitch (0.45mm)  High temperature range  Reference holes on the package for precise mounting  Reference dots on the package for high accuracy mounting  Reticle assembly service available

Catalogs

OIT18C-NR
OIT18C-NR
3 Pages

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