SMD phototransistor OIT25C-NR
silicon

SMD phototransistor - OIT25C-NR - Optoi Microelectronics - silicon
SMD phototransistor - OIT25C-NR - Optoi Microelectronics - silicon
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Characteristics

Other characteristics
SMD, silicon
Current

1 mA

Voltage

80 mV

Description

OIT25C-NR 6-ch. phototransistor array 0.68mm optical pitch on plastic SMD package General Description OIT25C consists in a six single diced silicon phototransistor. The phototransistors have a common collector on the back substrate, which is tied to a single pad and every emitter is accessible to specific pad. The optical pitch of the array is 0.68 mm, the LCC package electrical pitch is 1.27 mm. The active area of each element is 0.20 x 0.45 mm2 . The advantages of this product are the high uniformity of the silicon sensors and to the extremely controlled microelectronic process, the high stability of the signal and the high optical responsivity, due to the antireflective coating deposited on the phototransistor’s areas. The device is protected with a thin plastic film, that is resistant to reflow oven processes. The film has to be removed once the device has been assembled on the electronic board and the user can attach the optical reticle. Two reference marks are available for the precise collimator positioning. Applications Optical encoders Incremental encoders Optical Receivers Controls/drives Features  Resistant to automatic soldering processes  MSL2  High uniformity of silicon cells  High temperature range  High gain  Reference holes for precise mounting  Reference dots for very precise mounting  Reticle assembly service available

Catalogs

OIT25C-NR
OIT25C-NR
3 Pages

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