- Electricity - Electronics
- Electronic Component
- Bipolar phototransistor
- OSRAM Opto Semiconductors
NPN phototransistor Metal Can TO18silicon
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Characteristics
- Type
- NPN
- Other characteristics
- silicon
- Current
0.01 mA, 0.2 mA, 1.65 mA
Description
Fall time
tf
8.0 µs
Rise time
tf
8.0 µs
Spectral range of sensitivity typ.
λ10% min.
450 nm
λ10% max.
1100 nm
Radiant sensitive area
A
0.11 mm²
Beam angle
∢
110 °
Dimension
l
5.35 mm
w
5.35 mm
h
3.3 mm
Operating temperature
Top min.
-40 °C
Top max.
80 °C
Application fields
Industrial
Factory automation
Catalogs
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SFH 464
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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.