1. Electricity - Electronics
  2. Electronic Component
  3. Power MOSFET module
  4. Panasonic Electric Works Corporation of America

Power MOSFET module APV1111GVY
switchingresistance

Power MOSFET module - APV1111GVY - Panasonic Electric Works Corporation of America - switching / resistance
Power MOSFET module - APV1111GVY - Panasonic Electric Works Corporation of America - switching / resistance
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Characteristics

Technology
power, switching
Other characteristics
resistance
Current

Min.: 10 mA

Max.: 550 mA

Voltage

Min.: 60,000 mV

Max.: 1,500,000 mV

Description

Panasonic’s Photovoltaic MOSFET High Power Driver is available in a small package size (SSOP) with higher short circuit current and drop-out voltage to MOSFET's gate. Capable of driving high Vgs MOSFET such as SiC MOSFETs, this Driver is capable of high switching capacities at high switching speeds. Replacing a standard Electromechanical Relay with PhotoMOS® can provide additional benefits such as longer life cycle, better resistance to shock and vibration, low On-resistance and a theoretically infinite life cycle. This makes PhotoMOS® Relays a very good solution for Battery Monitoring Systems, Test & Measurement, Electrical Power and Industrial markets. Miniature SSOP Package High-Speed MOSFET Operation Part Number APV1111GVY for High Output Current Low On-Resistance of MOSFET Part Number APV3111GVY for High Output Voltage Small Package Size Higher Short Circuit Current Higher Drop Out Voltage High Switching Speeds RoHS/REACH Compliant Board Space Savings Higher Safety Ratings Switch Higher Rated MOSFETs Reduced Operating Time

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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.