Plasma cleaning machine PSX30 series

processfor electronics

The PSX307 Plasma Cleaner’s parallel plate chamber technology delivers superior etch uniformity over conventional batch systems. Experience surface cleaning before wirebond or flip-chip attach and surface activation and improved underfill wettability and mold encapsulation. The PSX307A variant supports both wafer-level processes and traditional substrate device-level processes. Surface modification of wafer before Insulation Layer, after Redistribution Layer, ball attach or after dicing to improve the die attach process. • Parallel plate technology enabling uniformity • Substrate or 300mm Wafer, with or without dicing frame • Patented Plasma Monitor (real-time) • Unit level process traceability • Argon, Oxygen or mixed process gas options Cleaning Method - Parallel plate RF back-sputtering method Gas for Electrical Discharge * - Ar [option : O2] [*1] Substrate Dimensions (mm) * - L 50 x W 20 to L 250 x W 75 [*2] incl. S type option L 50 x W 20 to L 330 x W 120 incl. M type option Substrate Thickness (mm) - 0.5 to 2.0 Dimensions (mm) / Mass * - W 930 x D 1,100 x H 1,450 / 555 kg W 1,764 x D 1,100 x H 1,450 / 850 kg incl. S type option W 1,764 x D 1,100 x H 1,450 / 770 kg incl. M type option [*3] Power Source * - 1-phase AC 200 V, 2.00 kVA [Full Load 5.00 kVA] [*4] Pneumatic Source - 0.49 MPa or more, 6.5 L/min [A.N.R Cleaning Method - Parallel plate RF back-sputtering method Gas for Electrical Discharge - Ar [Option : O2, O2 + He]