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Photodiode microchip XSJ-10-APD6-16

Photodiode microchip - XSJ-10-APD6-16 - PHOGRAIN TECHNOLOGY(SHENZHEN) CO., LTD.
Photodiode microchip - XSJ-10-APD6-16 - PHOGRAIN TECHNOLOGY(SHENZHEN) CO., LTD.
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photodiode

Description

This 25Gbps avalanche photodiode chip (APD chip) is a kind of Ground-Signal (GS) electrode structure, with top-illuminated active area size is Φ16μm. This product features is high multiplication, low capacitance, high bandwidth, low temperature coefficient and excellent reliability, application in 25G EPON, 5G Wireless and 100GBASE-ER4. 1. Φ16μm active area. 2. High multiplication. 3. High data rate: 25Gbps above. 4. Low capacitance. 5. Low temperature coefficient. 6. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 7. 100% testing and inspection. Applications 1. 25Gbps PON 2. 100GBASE-ER4(ER4-lite) 3. 5G Wireless.

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