Photodiode microchip XSJ-10-D6-20

InGaAsInP

This high data rate 10Gbps photodiode chip is InGaAs/InP PIN structure and top-illuminated. Features is high responsibility, low capacitance, low dark current, active area size is Φ50μm, anode and cathode bond pad on top for TO-CAN package wire-bonding. Application in 10Gbps receiver. 1. Φ20μm active area. 2. Ground-Signal-Ground (GSG) bond pad structure on top. 3. Low dark current, low capacitance, high responsibility. 4. Date rate up to 25Gbps. 5. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 6. 100% testing and inspection. 7. RoHS2.0 (2011/65/EU) compliant. Applications 1. 100 Gigabit Ethernet 2. 20GHz analog links. 3. High speed test and measurement.