- Electricity - Electronics
- Electronic Component
- Photodiode microchip
- PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.
Photodiode microchip XSJ-10-D5-50AInGaAsInP
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Characteristics
- Options
- photodiode, InP, InGaAs
Description
This high data rate 10Gbps photodiode chip is InGaAs/InP PIN structure and top-illuminated. Features is high responsibility, low capacitance, low dark current, active area size is Φ50μm, anode and cathode bond pad on top for TO-CAN package wire-bonding. Application in 10Gbps receiver.
1. Φ50μm active area.
2. Low capacitance.
3. High responsibility.
4. Low dark current.
5. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE.
6. Data rate up to 10Gbps.
7. 100% testing and inspection.
Applications
1. Long-haul optical networks.
2. 10G Ethernet.
3. Fiber-optic Datacom.
5. WDM, ATM.
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5G/4G Communication Applications
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